Datasheet > MMBT5088LT3

MMBT5088LT3

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	228K
描述
50mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, 3 PIN

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MMBT5088LT3 数据手册

ON Semiconductort

MMBT5088LT1

MMBT5089LT1

Low Noise Transistors

NPN Silicon

MMBT5089LT1 is a Preferred Device

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Symbol

5088LT1 5089LT1

Unit

Vdc

CEO

CBO

EBO

Vdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AF)

Emitter–Base Voltage

4.5

Vdc

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

COLLECTOR

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

T = 25°C

225

BASE

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

EMITTER

Total Device Dissipation

(2)

Alumina Substrate, T = 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

417

T , T

–55 to +150

stg

MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

MMBT5088

MMBT5089

—

Collector–Base Breakdown Voltage

(I = 100 mAdc, I = 0)

Vdc

nAdc

(BR)CBO

MMBT5088

MMBT5089

—

Collector Cutoff Current

(V = 20 Vdc, I = 0)

CBO

MMBT5088

MMBT5089

—

(V = 15 Vdc, I = 0)

Emitter Cutoff Current

EBO

EB(off)

= 3.0 Vdc, I = 0)

MMBT5088

MMBT5089

—

100

= 4.5 Vdc, I = 0)

1. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

627

Publication Order Number:

March, 2001 – Rev. 1

MMBT5088LT1/D

12 3 4

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