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MMBT5088S62Z PDF预览

MMBT5088S62Z

更新时间: 2024-11-18 18:41:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
6页 208K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

MMBT5088S62Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.73其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):300
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MMBT5088S62Z 数据手册

 浏览型号MMBT5088S62Z的Datasheet PDF文件第2页浏览型号MMBT5088S62Z的Datasheet PDF文件第3页浏览型号MMBT5088S62Z的Datasheet PDF文件第4页浏览型号MMBT5088S62Z的Datasheet PDF文件第5页浏览型号MMBT5088S62Z的Datasheet PDF文件第6页 
Discrete POWER & Signal  
Technologies  
2N5088  
2N5089  
MMBT5088  
MMBT5089  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 1Q / 1R  
E
NPN General Purpose Amplifier  
This device is designed for low noise, high gain, general purpose  
amplifier applications at collector currents from 1µA to 50 mA.  
Sourced from Process 07.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
Collector-Emitter Voltage  
Collector-Base Voltage  
2N5088  
2N5089  
2N5088  
2N5089  
30  
25  
35  
30  
4.5  
V
V
V
V
V
VCBO  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current - Continuous  
100  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5088  
2N5089  
*MMBT5088  
*MMBT5089  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
200  
357  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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