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MMBT5089 PDF预览

MMBT5089

更新时间: 2023-09-03 20:32:08
品牌 Logo 应用领域
安森美 - ONSEMI 放大器
页数 文件大小 规格书
8页 279K
描述
NPN通用放大器

MMBT5089 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.17
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):400JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MMBT5089 数据手册

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MMBT5089 替代型号

型号 品牌 替代类型 描述 数据表
MMBT5089LT1G ONSEMI

类似代替

Low Noise Transistors NPN Silicon
MMBT5089LT1 ONSEMI

类似代替

Low Noise Transistors
MMBT5089 FAIRCHILD

功能相似

NPN General Purpose Amplifier

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MMBT5089L MOTOROLA

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MMBT5089LT1 DBLECTRO

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Transistor