Datasheet > MMBT5140W

MMBT5140W

更新时间： 2024-10-01 14:55:15

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
2页	166K
描述
小信号晶体管

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中文翻译

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数据手册

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MMBT5140W 数据手册

MMBT5140W

PNP Silicon Epitaxial Planar Transistor

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Peak Pulse Current

-I_CM

350

Power Dissipation

P_tot

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at -V_CE= 5 V, -I_C= 1 mA

at -V_CE= 5 V, -I_C= 100 mA

at -V_CE= 5 V, -I_C= 500 mA

at -V_CE= 5 V, -I_C= 1 A

h_FE

300

250

160

800

Collector Base Cutoff Current

at -V_CB= 40 V

100

-I_CBO

-I_CES

-I_EBO

Collector Emitter Cutoff Current

at -V_CE= 30 V

Emitter Base Cutoff Current

at -V_EB= 5 V

Collector Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 1 mA

at -I_C= 500 mA, -I_B= 50 mA

at -I_C= 1 A, -I_B= 100 mA

0.2

0.25

0.5

-V_CE(sat)

Base Emitter Saturation Voltage

at -I_C= 1 A, -I_B= 50 mA

-V_BE(sat)

-V_BE(on)

f_T

1.1

Base Emitter Turn-on Voltage

at -I_C= 1 A, -V_CE= 5 V

150

Gain Bandwidth Product

at -V_CE= 10 V, -I_C= 50 mA, f = 100 MHz

MHz

Collector Capacitance

at -V_CB= 10 V, f = 1 MHz

C_c

Dated：06/12/2012 Rev：01

中文翻译

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