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MMBT5088LT1G PDF预览

MMBT5088LT1G

更新时间: 2024-11-21 11:49:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管PC
页数 文件大小 规格书
5页 189K
描述
Low Noise Transistors NPN Silicon

MMBT5088LT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:0.8
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:412002Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236)Samacsys Released Date:2017-06-15 02:27:56
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):300
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MMBT5088LT1G 数据手册

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MMBT5088LT1G,  
MMBT5089LT1G  
Low Noise Transistors  
NPN Silicon  
http://onsemi.com  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
COLLECTOR  
3
Compliant  
1
BASE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
2
EMITTER  
CollectorEmitter Voltage  
V
CEO  
Vdc  
MMBT5088  
MMBT5089  
30  
25  
CollectorBase Voltage  
EmitterBase Voltage  
V
Vdc  
CBO  
3
SOT23 (TO236)  
MMBT5088  
MMBT5089  
35  
30  
CASE 318  
STYLE 6  
1
V
4.5  
50  
Vdc  
2
EBO  
Collector Current Continuous  
I
C
mAdc  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
1x M G  
Total Device Dissipation FR5 Board,  
P
D
G
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
1
Thermal Resistance, JunctiontoAmbient  
R
556  
°C/W  
q
JA  
1x = Device Code  
x = Q for MMBT5088LT1  
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
x = R for MMBT5089LT1  
= Date Code*  
Derate above 25°C  
M
G
= PbFree Package  
(Note: Microdot may be in either location)  
Thermal Resistance, JunctiontoAmbient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
55 to +150  
stg  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 x 0.75 x 0.062 in.  
ORDERING INFORMATION  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
Device  
Package  
Shipping  
MMBT5088LT1G SOT23 3,000 / Tape & Reel  
(PbFree)  
MMBT5089LT1G SOT23 3,000 / Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 3  
MMBT5088LT1/D  
 

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