Datasheet > MMBT5088L99Z

MMBT5088L99Z

更新时间： 2024-11-19 04:36:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	208K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

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MMBT5088L99Z 数据手册

Discrete POWER & Signal

Technologies

2N5088

2N5089

MMBT5088

MMBT5089

TO-92

SOT-23

Mark: 1Q / 1R

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose

amplifier applications at collector currents from 1µA to 50 mA.

Sourced from Process 07.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

Collector-Emitter Voltage

Collector-Base Voltage

2N5088

2N5089

2N5088

2N5089

4.5

V_CBO

V_EBO

I_C

Emitter-Base Voltage

Collector Current - Continuous

100

Operating and Storage Junction Temperature Range

-55 to +150

°C

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N5088

2N5089

*MMBT5088

*MMBT5089

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

350

2.8

mW/°C

°C/W

R_θ

Thermal Resistance, Junction to Ambient

200

357

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

12 3 4 5 6

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