Datasheet > MMBT5088LT1

MMBT5088LT1

更新时间： 2024-11-21 20:31:07

品牌	Logo	应用领域
迪贝电子 - DBLECTRO		/
页数	文件大小	规格书
4页	248K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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MMBT5088LT1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

MMBT5088LT1 数据手册

Low Noise Transistors

NPN Silicon

COLLECTOR

MMBT5088LT1

MMBT5089LT1

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

5088LT 15089LT1

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CASE 318-08, STYLE 6

SOT-23 (TO-236AB)

Vdc

4.5

Vdc

ollectorCurrent—Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR- 5 Board (1)

T _A=25 °C

P_D

225

Derate above 25 °C

1.8

556

300

mW/ °C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate,(2) T_A=25°C

Derate above 25°C

R _θJA

P _D

2.4

417

mW/ °C

°C/W

°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

R _θJA

T _J, T _stg

–55 to +150

DEVICE MARKING

MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I _C= 1.0 mAdc, I _B= 0)

V _(BR)CEO

Vdc

MMBT5088

MMBT5089

—

Collector–Base Breakdown Voltage

V_(BR)CBO

Vdc

(I _C= 100 µAdc, I _E= 0)

MMBT5088

MMBT5089

—

Collector Cutoff Current

(V _CB= 20 Vdc, I _E= 0 )

(V _CB= 15 Vdc, I _E= 0 )

I_CBO

nAdc

MMBT5088

MMBT5089

—

Emitter Cutoff Current

(V_EB(off)= 3.0Vdc, I _C= 0)

I _EBO

nAdc

MMBT5088

MMBT5089

—

(V_EB(off)= 4.5Vdc, I _C= 0)

100

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

DB LECTRO Inc. 3600 boul. Matte suite i Brossard Qc J4Y-2Z2 tel:(450)-444-1424 fax:(450)-444-4714 www.dblectro.com

12 3 4

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