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MMBT5087LT3G PDF预览

MMBT5087LT3G

更新时间: 2024-11-18 10:52:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
7页 228K
描述
Low Noise Transistor

MMBT5087LT3G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:0.59
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):250
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

MMBT5087LT3G 数据手册

 浏览型号MMBT5087LT3G的Datasheet PDF文件第2页浏览型号MMBT5087LT3G的Datasheet PDF文件第3页浏览型号MMBT5087LT3G的Datasheet PDF文件第4页浏览型号MMBT5087LT3G的Datasheet PDF文件第5页浏览型号MMBT5087LT3G的Datasheet PDF文件第6页浏览型号MMBT5087LT3G的Datasheet PDF文件第7页 
MMBT5087LT1G  
Low Noise Transistor  
PNP Silicon  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
Compliant  
COLLECTOR  
3
MAXIMUM RATINGS  
1
BASE  
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
50  
Vdc  
CEO  
CBO  
CollectorBase Voltage  
EmitterBase Voltage  
V
50  
3.0  
50  
Vdc  
Vdc  
2
EMITTER  
V
EBO  
Collector Current Continuous  
I
C
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
3
SOT23 (TO236)  
Symbol  
Max  
Unit  
CASE 318  
STYLE 6  
1
Total Device Dissipation FR5 Board,  
P
D
2
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, JunctiontoAmbient  
R
q
JA  
556  
°C/W  
Total Device Dissipation Alumina  
P
D
MARKING DIAGRAM  
Substrate, (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, JunctiontoAmbient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
2Q M G  
G
T , T  
J
55 to +150  
stg  
1
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 x 0.75 x 0.062 in.  
2Q = Device Code  
M
G
= Date Code*  
= PbFree Package  
(Note: Microdot may be in either location)  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT5087LT1G SOT23 3,000 / Tape & Reel  
(PbFree)  
MMBT5087LT3G SOT23 10,000/Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 4  
MMBT5087LT1/D  
 

MMBT5087LT3G 替代型号

型号 品牌 替代类型 描述 数据表
MMBT5087LT1 ONSEMI

完全替代

Low Noise Transistor
MMBT5087LT1G ONSEMI

类似代替

Low Noise Transistor
MMBT5087 ONSEMI

类似代替

Low Noise Transistor

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