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MJL0302AG PDF预览

MJL0302AG

更新时间： 2024-11-03 03:49:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
5页 59K
描述
Complementary NPN-PNP Power Bipolar Transistors

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中文翻译

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MJL0302AG 技术参数

是否无铅： 不含铅生命周期：Obsolete
零件包装代码：TO-264AA包装说明：LEAD FREE, CASE 340G-02, TO-264, TO-3PBL, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.36
最大集电极电流 (IC)：15 A集电极-发射极最大电压：260 V
配置：SINGLE最小直流电流增益 (hFE)：75
JEDEC-95代码：TO-264AAJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：30 MHz

MJL0302AG 数据手册

 浏览型号MJL0302AG的Datasheet PDF文件第2页浏览型号MJL0302AG的Datasheet PDF文件第3页浏览型号MJL0302AG的Datasheet PDF文件第4页浏览型号MJL0302AG的Datasheet PDF文件第5页 
MJL0281A (NPN)  
MJL0302A (PNP)  
Preferred Devices  
Complementary NPN−PNP  
Power Bipolar Transistors  
These complementary devices are lower power versions of the  
popular MJL3281A and MJL1302A audio output transistors. With  
superior gain linearity and safe operating area performance, these  
transistors are ideal for high fidelity audio amplifier output stages and  
other linear applications.  
http://onsemi.com  
15 AMPERES  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
260 VOLTS − 180 WATTS  
Features  
• Exceptional Safe Operating Area  
• NPN/PNP Gain Matching within 10% from 50 mA to 3.0 A  
• Excellent Gain Linearity  
• High BVCEO  
• High Frequency  
• Pb−Free Packages are Available*  
TO−264  
CASE 340G  
STYLE 2  
Benefits  
• Reliable Performance at Higher Powers  
• Symmetrical Characteristics in Complementary Configurations  
• Accurate Reproduction of Input Signal  
• Greater Dynamic Range  
MARKING DIAGRAM  
• High Amplifier Bandwith  
Applications  
MJL0xxxA  
AYYWWG  
• High−End Consumer Audio Products  
♦ Home Amplifiers  
♦ Home Receivers  
3 EMITTER  
2 COLLECTOR  
1 BASE  
• Professional Audio Amplifiers  
♦ Theater and Stadium Sound Systems  
♦ Public Address Systems (PAs)  
MJL0xxxA = Device Code  
xxx = 281 or 302  
MAXIMUM RATINGS  
A
= Location Code  
= Year  
= Work Week  
= Pb−Free Package  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
260  
260  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
YY  
WW  
G
V
CEO  
V
CBO  
V
EBO  
ORDERING INFORMATION  
Collector−Emitter Voltage − 1.5 V  
V
260  
CEX  
Device  
Package  
Shipping  
Collector Current − Continuous  
Collector Current − Peak (Note 1)  
I
15  
30  
C
MJL0281A  
TO−264  
25 Units/Rail  
25 Units/Rail  
Base Current − Continuous  
I
1.5  
180  
Adc  
Watts  
°C  
B
MJL0281AG  
TO−264  
(Pb−Free)  
Total Power Dissipation @ T = 25°C  
P
D
C
Operating and Storage Junction  
Temperature Range  
T , T  
−ꢀꢀ65 to +150  
MJL0302A  
TO−264  
25 Units/Rail  
25 Units/Rail  
J
stg  
MJL0302AG  
TO−264  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 1  
MJL0281A/D  
 
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中文翻译

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MJL0302AG 替代型号

型号 品牌 替代类型 描述 数据表
MJL0302A ONSEMI

完全替代

 Complementary NPN-PNP Power Bipolar Transistors
MJL1302AG ONSEMI

类似代替

 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS
MJL1302A ONSEMI

类似代替

 COMPLEMENTARY SILICON POWER TRANSISTORS

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