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MJE340 PDF预览

MJE340

更新时间: 2024-11-15 22:30:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管局域网
页数 文件大小 规格书
4页 120K
描述
0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS

MJE340 数据手册

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Order this document  
by MJE340/D  
SEMICONDUCTOR TECHNICAL DATA  
0.5 AMPERE  
POWER TRANSISTOR  
NPN SILICON  
300 VOLTS  
. . . useful for high–voltage general purpose applications.  
Suitable for Transformerless, Line–Operated Equipment  
Thermopad Construction Provides High Power Dissipation Rating for High  
Reliability  
20 WATTS  
CASE 77–08  
TO–225AA TYPE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
300  
3.0  
Unit  
Vdc  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
CEO  
V
EB  
Vdc  
Collector Current — Continuous  
I
C
500  
mAdc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
20  
0.16  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
θ
6.25  
C/W  
JC  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage  
V
300  
Vdc  
µAdc  
µAdc  
CEO(sus)  
(I = 1.0 mAdc, I = 0)  
C
B
Collector Cutoff Current  
(V = 300 Vdc, I = 0)  
I
100  
100  
CBO  
CB  
Emitter Cutoff Current  
(V = 3.0 Vdc, I = 0)  
E
I
EBO  
EB  
C
ON CHARACTERISTICS  
DC Current Gain  
(I = 50 mAdc, V  
C CE  
h
FE  
30  
240  
= 10 Vdc)  
REV 7  
Motorola, Inc. 1995

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