Datasheet > MJD44H11

MJD44H11

更新时间： 2024-11-22 11:14:07

品牌	Logo	应用领域
安世 - NEXPERIA		开关光电二极管晶体管
页数	文件大小	规格书
12页	236K
描述
80 V, 8 A NPN high power bipolar transistorProduction

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MJD44H11 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.61	Is Samacsys：	N
Base Number Matches：	1

MJD44H11 数据手册

MJD44H11

80 V, 8 A NPN high power bipolar transistor

12 September 2019

Product data sheet

1. General description

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device

(SMD) plastic package.

PNP complement: MJD45H11

2. Features and benefits

•

High thermal power dissipation capability

•

High energy efficiency due to less heat generation

Electrically similar to popular MJD44H series

Low collector emitter saturation voltage

Fast switching speeds

3. Applications

•

Power management

Load switch

Linear mode voltage regulator

Constant current drive backlighting application

Motor drive

Relay replacement

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

I_C

collector current

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain V_CE= 1 V; I_C= 2 A; T_amb= 25 °C

12 3 4 5 6 7...12

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