Datasheet > MGF0905A_11

MGF0905A_11

更新时间： 2024-10-15 11:57:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
4页	157K
描述
High-power GaAs FET (small signal gain stage)

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MGF0905A_11 数据手册

< High-power GaAs FET (small signal gain stage)>

MGF0905A

L & S BAND / 2.5W

non - matched

DESCRIPTION

The MGF0905A, GaAs FET with an N-channel schottky

OUTLINE DRAWING

Unit : millimeters

gate, is designed for use in UHF band amplifiers.

FEATURES

①

 High output power

Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm

 High power gain

Gp=8.0dB(TYP.)

@f=1.65GHz,Pin=26dBm

 High power added efficiency

P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBm

②

APPLICATION

φ2.2

0.6±0.2

 For UHF Band power amplifiers

③

QUALITY

 GG

5.0

RECOMMENDED BIAS CONDITIONS

 Vds=8V  Ids=800mA  Rg=100 Refer to Bias Procedure

9.0±0.2

14.0

Absolute maximum ratings (Ta=25C)

Symbol

Parameter

Ratings

-17

Unit

VGDO Gate to drain voltage

Gate to source

VGSO

voltage

-17

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

Drain current

3200

-10

GF-7

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

21.5

PT*1

Tch

175

C

Tstg

-65 to +175

*1:Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

1600

2400

800

-3

3200

IDSS

VDS=3V,ID=800mA

500

-1

-5

Gate to source cut-off voltage

Output power

VDS=3V,ID=10mA

VGS(off)

VDS=8V,ID(RF off)=800mA

f=1.65GHz,Pin=26dBm

dBm

P.A.E.

Power added efficiency

Thermal resistance

Rth(ch-c) *2

Rth(ch-a) *3

ΔVf method

12.5

72.5

C/W

*2 :Channel-case

*3 :Channel-ambient

Publication Date : Apr., 2011

12 3 4

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