Datasheet > MGF0909A_11

MGF0909A_11

更新时间： 2024-10-15 11:02:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	110K
描述
High-power GaAs FET(small signal gain stage)

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< High-power GaAs FET (small signal gain stage) >

MGF0909A

L & S BAND / 6W

non - matched

DESCRIPTION

The MGF0909A GaAs FET with an N-channel schottky

OUTLINE DRAWING

Unit : millimeters

Gate, is designed for use L/S band amplifiers.

FEATURES

①

 High output power

P1dB=38.0dBm(TYP.) @f=2.3GHz

 High power gain

GLp=11.0dB(TYP.)

@f=2.3GHz

 High power added efficiency

add=45%(TYP.)

@f=2.3GHz,P1dB

②

 Hermetic Package

②

φ2.2

0.6±0.2

APPLICATION

 For L/S Band power amplifiers

③

QUALITY

 GG

RECOMMENDED BIAS CONDITIONS

5.0

 Vds=10V  Ids=1.3A  Rg=100

Absolute maximum ratings (Ta=25C)

9.0±0.2

14.0

Symbol

Parameter

Ratings

-15

Unit

Gate to source

breakdown voltage

VGSO

VGDO Gate to drain breakdown voltage

-15

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

Drain current

GF-7

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-15

31.5

27.3

Tch

Tstg

175

C

-65 to +175

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

5.0

Saturated drain current

VDS=3V,VGS=0V

-2.0

IDSS

Gate to source cut-off voltage

Transconductance

VDS=3V,ID=10mA

VDS=3V,ID=1.3A

-5.0

VGS(off)

1.5

38.0

11.0

P1dB

add

GLP

Output power 1dB Compression P VDS=10V,ID=1.3A,f=2.3GHz

37.0

dBm

Power added Efficiency

Linear Power Gain

*1 *1:Po=P1dB

*2 *2:Pi=22dBm

Vf Method

10.0

C/W

Rth(ch-c) Thermal Resistance *1

*1:_{Channel to case /}

Above parameters, ratings, limits are subject to change.

Publication Date : Apr., 2011

12 3

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