Datasheet > MGF0917A_11

MGF0917A_11

更新时间： 2022-11-20 10:12:51

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
4页	105K
描述
High-power GaAs FET (small signal gain stage)

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MGF0917A_11 数据手册

< High-power GaAs FET (small signal gain stage) >

MGF0917A

L & S BAND / 0.25W

SMD non - matched

DESCRIPTION

The MGF0917A GaAs FET with an N-channel schottky

Gate, is designed for use UHF band amplifiers.

FEATURES

 High output power

Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm

 High power gain

Gp=21dB(TYP.) @f=1.9GHz

 High power added efficiency

add=38%(TYP.) @f=1.9GHz,Pin=4dBm

 Hermetic Package

APPLICATION

 For UHF Band power amplifiers

QUALITY

 GG

Fig.1

RECOMMENDED BIAS CONDITIONS

 Vds=10V  Ids=75mA  Rg=2k

Delivery

-01:Tape & Reel(1K), -03:Trai(50pcs)

Absolute maximum ratings (Ta=25C)

Symbol

Parameter

Ratings

Unit

Gate to source

breakdown voltage

VGSO

-15

VGDO Gate to drain breakdown voltage

Drain current

200

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-0.6

2.5

Tch

Tstg

175

C

-65 to +175

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

150

Max.

200

Saturated drain current

VDS=3V,VGS=0V

IDSS

Gate to source cut-off voltage

Transconductance

VDS=3V,ID=0.5mA

-1.0

-5.0

dBm

VGS(off)

VDS=3V,ID=75mA

0.9

Output power

VDS=10V,ID=75mA,f=1.9GHz

Pin=4dBm

add

GLP

Power added Efficiency

Linear Power Gain

Noise figure

VDS=10V,ID=75mA,f=1.9GHz

Rth(ch-c) Thermal Resistance *1

Vf Method

C/W

*1:_{Channel to case /}

Above parameters, ratings, limits are subject to change.

Publication Date : Apr., 2011

12 3 4

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