Datasheet > MGF0952P_11

MGF0952P_11

更新时间： 2024-09-17 11:02:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
6页	294K
描述
High-power GaAs FET (small signal gain stage)

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MGF0952P_11 数据手册

< High-power GaAs FET (small signal gain stage) >

MGF0952P

L & S BAND / 4.5W

SMD / Plastic Mold non - matched

DESCRIPTION

The MGF0952P GaAs FET with an N-channel schottky

Gate, is designed for use L/S band amplifiers.

FEATURES

 High output power

Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm

 High power gain

Gp=13.5dB(TYP.) @f=2.15GHz

 High power added efficiency

add=50%(TYP.) @f=2.15GHz,Pin=25dBm

 Plastic Mold Lead – less Package

APPLICATION

 For L/S Band power amplifiers

QUALITY

 GG

Fig.1

RECOMMENDED BIAS CONDITIONS

 Vds=10V  Ids=700mA  Rg=100

Delivery

Tape & Reel(1.5K)

Absolute maximum ratings (Ta=25C)

Symbol

VGSO

Parameter

Ratings

-15

Unit

Gate to source

breakdown voltage

VGDO Gate to drain breakdown voltage

-15

Drain current

3.5

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-10

20.0

Tch

Tstg

150

C

-40 to +150

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

-3

Max.

Gate to source cut-off voltage

Output power

VDS=3V,ID=12.6mA

-1

-5

dBm

VGS(off)

Po *1

VDS=10V,ID=700mA,f=2.15GHz

*1:Pin=25dBm, *2:Pin=15dB

*3:f1=2.15GHz,f2=2.16GHz

Po(SCL)=25dBm

35.0

36.5

add *1

GLP *2

IM3 *3

Power added Efficiency

Linear Power Gain

13.5

-42

4.5

3rd order Modulation Distortion

dBc

C/W

Rth(ch-c) Thermal Resistance *4

Vf Method

6.5

*4 Channel to case /

Above parameters, ratings, limits are subject to change.

Publication Date : Apr., 2011

12 3 4 5 6

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