生命周期: | Obsolete | 包装说明: | CHIP CARRIER, R-CQCC-N3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.84 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 10 V |
最大漏极电流 (Abs) (ID): | 1.5 A | 最大漏极电流 (ID): | 0.4 A |
FET 技术: | JUNCTION | 最高频带: | S BAND |
JESD-30 代码: | R-CQCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 8.3 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | QUAD | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGF0920A-03 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction | |
MGF0921A | MITSUBISHI |
获取价格 |
L & S BAND GaAs FET | |
MGF0921A_11 | MITSUBISHI |
获取价格 |
High-power GaAs FET (small signal gain stage) | |
MGF0951P | MITSUBISHI |
获取价格 |
L & S BAND GaAs FET Plastic Mold Lead-less PKG | |
MGF0951P_11 | MITSUBISHI |
获取价格 |
High-power GaAs FET (small signal gain stage) | |
MGF0952P | MITSUBISHI |
获取价格 |
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] | |
MGF0952P_11 | MITSUBISHI |
获取价格 |
High-power GaAs FET (small signal gain stage) | |
MGF0953P | MITSUBISHI |
获取价格 |
L & S BAND GaAs FET | |
MGF0953P_11 | MITSUBISHI |
获取价格 |
High-power GaAs FET (small signal gain stage) | |
MGF1102-01 | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M |