Datasheet > MGF0912A_11

MGF0912A_11

更新时间： 2024-10-15 11:02:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	168K
描述
High-power GaAs FET (small signal gain stage)

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MGF0912A_11 数据手册

< High-power GaAs FET (small signal gain stage) >

MGF0912A

L & S BAND / 14W

non - matched

DESCRIPTION

The MGF0912A, GaAs FET with an N-channel schottky

OUTLINE DRAWING

Unit : millimeters

gate, is designed for use in L/S band amplifiers.

FEATURES

①

 High output power

Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm

 High power gain

Gp=10.5dB(TYP.)

@f=1.9GHz

 High power added efficiency

P.A.E =38%(TYP.) @f=1.9GHz,Pin=33dBm

 Hermetic Package

②

φ2.2

0.6±0.2

APPLICATION

 For L/S Band power amplifiers

③

QUALITY

 GG

Delivery

5.0

 Tray

RECOMMENDED BIAS CONDITIONS

 Vds=10V  Ids=2.6A  Rg=50

9.0±0.2

14.0

Absolute maximum ratings (Ta=25C)

Symbol

Parameter

Ratings

-15

Unit

VGDO Gate to drain voltage

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

Gate to source

VGSO

voltage

-15

GF-7

Drain current

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-30

PT*1

Tch

53.6

175

C

Tstg

-65 to +175

*1:Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

IDSS

VDS=3V,ID=2.6A

-5

Gate to source cut-off voltage

Output power

VDS=3V,ID=20mA

-2

40.5

VGS(off)

VDS=10V,ID(RF off)=2.6A

f=1.9GHz,Pin=33dBm

41.5

10.5

dBm

P.A.E.

GLP

Power added efficiency

Linear Power Gain

VDS=10V,ID(RF off)=2.6A,=1.9GHz

9.5

Rth(ch-c) *3

Thermal resistance

ΔVf method

100

C/W

*2 :Channel-case

*3 :Channel-ambient

Publication Date : Apr., 2011

12 3

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