品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | / | |
页数 | 文件大小 | 规格书 |
4页 | 108K | |
描述 | ||
High-power GaAs FET (small signal gain stage) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGF0916A-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction | |
MGF0916A-03 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction | |
MGF0917A | MITSUBISHI |
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High-power GaAs FET (small signal gain stage) | |
MGF0917A_11 | MITSUBISHI |
获取价格 |
High-power GaAs FET (small signal gain stage) | |
MGF0917A-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction | |
MGF0917A-03 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction | |
MGF0918A | MITSUBISHI |
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L & S BAND GaAs FET [ SMD non - matched ] | |
MGF0918A_04 | MITSUBISHI |
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L & S BAND GaAs FET | |
MGF0918A_11 | MITSUBISHI |
获取价格 |
High-power GaAs FET (small signal gain stage) | |
MGF0918A-03 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction |