Datasheet > MGF0910A_11

MGF0910A_11

更新时间： 2024-10-15 12:20:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
4页	213K
描述
High-power GaAs FET (small signal gain stage)

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MGF0910A_11 数据手册

< High-power GaAs FET (small signal gain stage) >

MGF0910A

L & S BAND / 6W

non - matched

DESCRIPTION

The MGF0910A, GaAs FET with an N-channel schottky

gate, is designed for use in UHF band amplifiers.

FEATURES

 Class A operation

 High output power

P1dB=38.0dBm(TYP.) @f=2.3GHz

 High power gain

GLP=11.0dB(TYP.)

@f=2.3GHz

 High power added efficiency

P.A.E =45%(TYP.)

@f=2.3GHz,P1dB

 Hermetically sealed metal-ceramic package with ceramic lid

APPLICATION

 For UHF Band power amplifiers

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 Vds=10V  Ids=1.3A  Rg=100 Refer to Bias Procedure

Absolute maximum ratings (Ta=25C)

Symbol

Parameter

Ratings

-15

Unit

VGDO Gate to drain voltage

Gate to source

VGSO

voltage

-15

Drain current

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-15

31.5

PT*1

Tch

27.3

175

C

Tstg

-65 to +175

*1:Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

IDSS

VDS=3V,ID=1.3A

VDS=3V,ID=10mA

1.5

Gate to source cut-off voltage

-2

-5

VGS(off)

P1dB

Output power at 1dB gain compression VDS=10V,ID(RF off)=1.3A

dBm

f=2.3GHz

GLP

Linear Power Gain

Power added efficiency

Thermal resistance

P.A.E.

Rth(ch-c) *2

ΔVf method

5.5

C/W

*2 :Channel-case

Publication Date : Apr., 2011

12 3 4

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