Datasheet > MGF0911A

MGF0911A

更新时间： 2024-10-14 22:30:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	26K
描述
L, S BAND POWER GaAs FET

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中文翻译

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数据手册

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MGF0911A 数据手册

MITSUBISHI SEMICONDUCTOR áGaAs FETñ

MGF0911A

L, S BAND POWER GaAs FET

DESCRIPTION

The MGF0911A, GaAs FET with an N-channel schottky gate, is

OUTLINE DRAWING

Unit:millimeters

designed for use in UHF band amplifiers.

17.5

FEATURES

• Class A operation

1.0

• High output power

P1dB=41dBm(TYP)

• High power gain

@2.3GHz

2-R1.25

GLP=11dB(TYP)

• High power added efficiency

hadd=40%(TYP)

@2.3GHz

@2.3GHz,P1dB

14.3

• Hermetically sealed metal-ceramic package with ceramic lid

9.4

APPLICATION

UHF band power amplifiers

QUALITY GRADE

• IG

10.0

RECOMMENDED BIAS CONDITIONS

• VDS=10V

GATE

• ID=2.6A

SOURCE(FLANGE)

DRAIN

• Rg=50W

GF-21

• Refer to Bias Procedure

ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)

Symbol

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

Unit

VGDO

VGSO

-15

Reverse gate current

IGR

IGF

Forward gate current

Total power dissipation

Channel temperature

Storage temperature

37.5

175

-65 to +175

Tch

˚C

Tstg

*1:TC=25˚C

ELECTRICAL CHARACTERISTICS (Ta=25˚C)

Limits

Symbol

Parameter

Unit

Min

–

Typ

–

Max

–

IDSS

Saturated drain current

Transconductance

VDS=3V,VGS=0V

VDS=3V,ID=2.6A

–

3.0

–

Gate to source cut-off voltage

VGS(off)

-2

-5

VDS=3V,ID=20mA Test conditions

VDS=10V,ID 2.6A,f=2.3GHz

DVf method

Output power at 1dB gain

compression

–

dBm

P1dB

–

Linear power gain

–

GLP

Power added efficiency at P1dB

Thermal resistance *1

hadd

–

4.0

Rth(ch-c)

˚C/W

*1:Channel to case *2:Pin=25dBm

Nov. ´97

12 3

中文翻译

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