Datasheet > MGF0910A_1

MGF0910A_1

更新时间： 2024-10-15 03:49:35

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
4页	181K
描述
L, S BAND POWER GaAs FET

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数据手册

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MGF0910A_1 数据手册

MITSUBISHI SEMICONDUCTOR GaAs FET

MGF0910A

L, S BAND POWER GaAs FET

DESCRIPTION

The MGF0910A, GaAs FET with an N-channel schottky gate, is

Unit:millimeters

OUTLINE DRAWING

designed for use in UHF band amplifiers.

17.5

FEATURES

• Class A operation

1.0

• High output power

P1dB=38dBm(TYP)

• High power gain

@2.3GHz

2-R1.25

GLP=11dB(TYP)

• High power added efficiency

hadd=45%(TYP)

@2.3GHz

@2.3GHz,P1dB

14.3

• Hermetically sealed metal-ceramic package with ceramic lid

9.4

APPLICATION

UHF band power amplifiers

QUALITY GRADE

• IG

10.0

RECOMMENDED BIAS CONDITIONS

• VDS=10V

GATE

• ID=1.3A

SOURCE(FLANGE)

DRAIN

• Rg=100W

GF-21

• Refer to Bias Procedure

ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)

Symbol

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

Unit

VGDO

VGSO

-15

Reverse gate current

IGR

IGF

31.5

27.3

175

Forward gate current

Total power dissipation

Channel temperature

Storage temperature

Tch

˚C

-65 to +175

Tstg

*1:TC=25˚C

ELECTRICAL CHARACTERISTICS (Ta=25˚C)

Limits

Symbol

Test conditions

Unit

Parameter

Min

–

Typ

–

Max

5.0

–

IDSS

Saturated drain current

Transconductance

VDS=3V,VGS=0V

VDS=3V,ID=1.3A

VDS=3V,ID=10mA

–

1.5

–

-2

-5

VGS(off)

Gate to source cut-off voltage

Output power at 1dB gain

compression

–

dBm

P1dB

VDS=10V,ID 1.3A,f=2.3GHz

–

Linear power gain

–

GLP

Power added efficiency at P1dB

Thermal resistance *1

hadd

–

DVf method

5.5

Rth(ch-c)

˚C/W

*1:Channel to case *2:Pin=22dBm

Nov. ´97

12 3 4

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