Datasheet > MGF0907B_11

MGF0907B_11

更新时间： 2024-10-15 11:02:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
4页	160K
描述
High-power GaAs FET (small signal gain stage)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MGF0907B_11 数据手册

< High-power GaAs FET (small signal gain stage) >

MGF0907B

L & S BAND / 10W

non - matched

DESCRIPTION

The MGF0907B, GaAs FET with an N-channel schottky

gate, is designed for use in UHF band amplifiers.

FEATURES

 Class A operation

 High output power

P1dB=40.0dBm(TYP.) @f=2.3GHz

 High power gain

GLP=10.0dB(TYP.)

@f=2.3GHz

 High power added efficiency

P.A.E =37%(TYP.)

@f=2.3GHz,P1dB

 Hermetically sealed metal-ceramic package with ceramic lid

APPLICATION

 For UHF Band power amplifiers

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 Vds=10V  Ids=2.4A  Rg=50 Refer to Bias Procedure

Absolute maximum ratings (Ta=25C)

Symbol

Parameter

Ratings

Unit

VGDO Gate to drain voltage

-15

Gate to source

VGSO

voltage

-15

Drain current

-20

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

PT*1

Tch

37.5

175

C

Tstg

-65 to +175

*1:Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Typ.

Unit

Min.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

IDSS

VDS=3V,ID=2.2A

VDS=3V,ID=20mA

Gate to source cut-off voltage

-1

-2.5

-4

VGS(off)

P1dB

GLP

Output power at 1dB gain compression VDS=10V,ID(RF off)=2.4A

38.5

dBm

f=2.3GHz

Linear Power Gain

Drain current

2.2

3.0

P.A.E.

Rth(ch-c) *2

Power added efficiency

Thermal resistance

ΔVf method

4.0

C/W

*2 :Channel-case

Publication Date : Apr., 2011

12 3 4

中文翻译

下载PDF

与MGF0907B_11相关器件

型号	品牌	获取价格	描述	数据表
MGF0909	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0909A	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0909A_1	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0909A_11	MITSUBISHI	获取价格	High-power GaAs FET(small signal gain stage)
MGF0910A	MITSUBISHI	获取价格	L, S BAND POWER GaAs FET
MGF0910A_1	MITSUBISHI	获取价格	L, S BAND POWER GaAs FET
MGF0910A_11	MITSUBISHI	获取价格	High-power GaAs FET (small signal gain stage)
MGF0911A	MITSUBISHI	获取价格	L, S BAND POWER GaAs FET
MGF0911A_1	MITSUBISHI	获取价格	L, S BAND POWER GaAs FET
MGF0911A_11	MITSUBISHI	获取价格	High-power GaAs FET (small signal gain stage)