MGF0909A

更新时间： 2024-10-14 22:30:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	26K
描述
L,S BAND POWER GaAs FET

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MGF0909A 数据手册

MITSUBISHI SEMICONDUCTOR GaAs FET

MGF0909A

L, S BAND POWER GaAs FET

DESCRIPTION

The MGF0909A, GaAs FET with an N-channel schottky gate, is

Unit:millimeters

OUTLINE DRAWING

designed for use in UHF band amplifiers.

FEATURES

• High output power

P1dB=38dBm(TYP.)

• High power gain

@f=2.3GHz

GLP=11dB(TYP.)

• High power added efficiency

hadd=45%(TYP.)

@f=2.3GHz,Pin=20dBm

@f=2.3GHz,P1dB=20dBm

0.6±0.2

ø2.2

APPLICATION

For UHF Band power amplifiers

5.0

QUALITY GRADE

• GG

RECOMMENDED BIAS CONDITIONS

• VDS=10V

9.0±0.2

14.0

• ID=1.3A

• Rg=100W

GATE

• Refer to Bias Procedure

SOURCE

DRAIN

GF-7

ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)

Symbol

Parameter

Ratings

Unit

VGSO

VGDO

Gate to source voltage

Gate to drain voltage

Drain current

-15

5.0

Reverse gate current

IGR

IGF

31.5

Forward gate current

Total power dissipation

Channel temperature

Storage temperature

27.3

Tch

175

-65 to +175

˚C

Tstg

*1:TC=25˚C

ELECTRICAL CHARACTERISTICS (Ta=25˚C)

Limits

Symbol

Parameter

Test conditions

Unit

Min

Typ

–

Max

–

-2

–

IDSS

Saturated drain current

Gate to source cut-off voltage

Transconductance

VDS=3V,VGS=0V

VDS=3V,ID=10mA

VDS=3V,ID=1.3A

-5

VGs(off)

–

1.5

–

dBm

Output power

P1dB

VDS=10V,ID=1.3A,f=2.3GHz

Linear power gain

–

GLP

Power added efficiency at P1dB

–

hadd

–

Thermal resistance *1

DVf method

5.5

Rth(ch-c)

˚C/W

*1:Channel to case *2:Pin=22dBm

Nov. ´97

12 3

中文翻译

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