Datasheet > MGF0904A_11

MGF0904A_11

更新时间： 2024-10-15 11:02:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
4页	153K
描述
High-power GaAs FET (small signal gain stage)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MGF0904A_11 数据手册

< High-power GaAs FET (small signal gain stage) >

MGF0904A

L & S BAND / 0.6W

non - matched

DESCRIPTION

The MGF0904A, GaAs FET with an N-channel schottky

OUTLINE DRAWING

Unit : millimeters

gate, is designed for use in UHF band amplifiers.

FEATURES

①

 High output power

Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm

 High power gain

Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm

 High power added efficiency

P.A.E =40%(TYP.) @f=1.65GHz,Pin=15dBm

②

APPLICATION

φ2.2

0.6±0.2

 For UHF Band power amplifiers

③

QUALITY

 GG

5.0

RECOMMENDED BIAS CONDITIONS

 Vds=8V  Ids=200mA  Rg=500 Refer to Bias Procedure

9.0±0.2

14.0

Absolute maximum ratings (Ta=25C)

Symbol

Parameter

Ratings

-17

Unit

VGDO Gate to drain voltage

Gate to source

VGSO

voltage

-17

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

Drain current

800

GF-7

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-2.5

5.4

PT*1

Tch

3.75

175

C

Tstg

-65 to +175

*1:Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

400

120

-1

Typ.

Max.

800

Saturated drain current

Transconductance

VDS=3V,VGS=0V

550

200

-3

IDSS

VDS=3V,ID=300mA

-5

Gate to source cut-off voltage

Output power

VDS=3V,ID=2.5mA

VGS(off)

VDS=8V,ID(RF off)=200mA

f=1.65GHz,Pin=15dBm

dBm

P.A.E.

Power added efficiency

Thermal resistance

Rth(ch-c) *2

Rth(ch-a) *3

ΔVf method

100

C/W

*2 :Channel-case

*3 :Channel-ambient

Publication Date : Apr., 2011

12 3 4

中文翻译

下载PDF

与MGF0904A_11相关器件

型号	品牌	获取价格	描述	数据表
MGF0904A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se
MGF0905	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0905A	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0905A_1	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0905A_11	MITSUBISHI	获取价格	High-power GaAs FET (small signal gain stage)
MGF0905A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se
MGF0906	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0906A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide,
MGF0906B	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0906B_1	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET