Datasheet > MGF0805A_11

MGF0805A_11

更新时间： 2024-10-15 12:20:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
8页	325K
描述
High-power GaAs FET (small signal gain stage)

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MGF0805A_11 数据手册

< High-power GaAs FET (small signal gain stage) >

MGF0805A

L & S BAND / 4.5W

SMD non - matched

DESCRIPTION

The MGF0805A, GaAs FET with an N-channel schottky

gate, is designed for MMDS/UMTS/WiMAX applications.

FEATURES

 High output power

Po=36.5dBm(TYP.)

 High power added efficiency

P.A.E =50%(TYP.)

 Hermetic package

 Designed for use in Class AB linear amplifiers

APPLICATION

 L/S band power amplifiers

QUALITY

 GG

Packaging

 Tape & Reel (1000 pcs)

RECOMMENDED BIAS CONDITIONS

 Vds=10V  Ids=400mA  Rg=100

Absolute maximum ratings (Ta=25C)

Symbol

VDS

VGS

Parameter

Ratings

Unit

Drain to source voltage

Gate to source

Drain current

voltage

-5

2.5

IGR

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-10

IGF

PT*1

Tch

175

C

Tstg

-55 to +150

*1:Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Typ.

1800

1000

-1.1

Unit

Min.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

IDSS

VDS=3V,ID=400mA

Gate to source cut-off voltage

Output power

VDS=3V,ID=10mA

-0.5

-2

VGS(off)

VDS=10V,ID(RF off)=400mA

f=1.9GHz,Pin=22dBm

36.5

dBm

P.A.E.

GLP

Power added efficiency

Linear power gain

VDS=10V,ID(RF off)=400mA,f=1.9GHz

14.5

Rth(ch-c) *2

Thermal resistance

ΔVf method

C/W

*2 :Channel-case

Specifications are subject to change without notice.

Publication Date : Apr., 2011

12 3 4 5 6 7 8

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