Datasheet > MGF0904

MGF0904

更新时间： 2024-10-14 22:30:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	185K
描述
L,S BAND POWER GaAs FET

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中文翻译

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数据手册

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MGF0904 数据手册

Light Bar (8.89mm x 3.81mm)

Luminous Intensity

at 20mA

Minimum Maximum

Forward Voltage

at 20mA

Peak

Wave Length

at 20mA

Line

No.

Part

No.

Lens

Typical

Maximum

Drawing

E2010

E2011

Diffused

White

15.0mcd

10.0mcd

40.0mcd

25.0mcd

1.85V

2.5V

660nm

R^ULE^TRD^{A BRIGHT}

G^SUR^PEE^RE^BRN^IGHT

•

Diffused

White

2.2V

2.5V

565nm

Light Bar (8.89mm x 8.89mm)

Luminous Intensity

at 20mA

Minimum Maximum

Forward Voltage

at 20mA

Peak

Wave Length

at 20mA

Line

No.

Part

No.

Lens

Typical

Maximum

Drawing

R^ULE^TRD^{A BRIGHT}

G^SUR^PEE^RE^BRN^IGHT

E2040

Diffused

White

30.0mcd

20.0mcd

80.0mcd

50.0mcd

1.85V

2.5V

660nm

•

E2041

E2020

Diffused

White

2.2V

2.5V

565nm

Diffused

White

15.0mcd

10.0mcd

40.0mcd

26.0mcd

1.85V

2.20V

2.5V

660nm

565nm

RED &

•

GREEN

•

Telephone: 781-935-4442

Fax: 781-938-5867

sales@gilway.com

www.gilway.com

Engineering Catalog 169

12 3

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与MGF0904相关器件

型号	品牌	获取价格	描述	数据表
MGF0904A	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0904A_1	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0904A_11	MITSUBISHI	获取价格	High-power GaAs FET (small signal gain stage)
MGF0904A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se
MGF0905	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0905A	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0905A_1	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0905A_11	MITSUBISHI	获取价格	High-power GaAs FET (small signal gain stage)
MGF0905A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se
MGF0906	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET