Datasheet > MGF0846G

MGF0846G

更新时间： 2024-10-15 11:02:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
4页	114K
描述
High-power GaN HEMT (small signal gain stage)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MGF0846G 数据手册

PRELIMINARY

< High-power GaN HEMT (small signal gain stage) >

MGF0846G

L to C BAND / 40W

non - matched

DESCRIPTION

The MGF0846G, GaN HEMT with an N-channel schottky

OUTLINE DRAWING

Unit : millimeters

gate, is designed for MMDS/UMTS/WiMAX applications.

FEATURES

①

 High voltage operation

VDS=47V

 High output power

Po=46.5dBm(TYP.) @f=2.6GHz,P3dB

 High efficiency

d=60%(TYP.) @f=2.6GHz,P3dB

 Designed for use in Class AB linear amplifiers

②

φ2.2

0.6±0.2

APPLICATION

 MMDS/UMTS/WiMAX

③

QUALITY

 GG

Packaging

5.0

 4 inch Tray (25 pcs)

RECOMMENDED BIAS CONDITIONS

 Vds=47V  Ids=340mA  Rg=30

9.0±0.2

14.0

Absolute maximum ratings (Ta=25C)

Symbol

VDS

VGS

IGR

Parameter

Ratings

Unit

Drain to Source Voltage

120

-10

(1) GATE

(2) SOURCE (FLANGE)

Gate to source

voltage

GF-7

(3) DRAIN

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-6

IGF

120

PT*1

Tch

230

C

Tstg

-65 to +175

*1:Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

-1

Typ.

Max.

Gate to source cut-off voltage

3dB gain compression power

Drain efficiency

VDS=47V,ID=12mA

-5

dBm

VGS(off)

P3dB

VDS=47V,ID(RF off)=340mA

f=2.6GHz

45.5

46.5

d

*2 : Pin=20dBm

GLP *2

Linear power gain

Rth(ch-c) *3

Thermal resistance

ΔVf method

2.5

3.2

C/W

*3 :Channel-case

Specification are subject to change without notice.

Note

DC aging is recommended to perform before operating in order to stabilize a characteristics of GaN-HEMT. (Ta≧80C)

 Bias conditions

Vds=47V , Ids=340mA

 Time

10hrs

Publication Date : May., 2011

12 3 4

中文翻译

下载PDF

与MGF0846G相关器件

型号	品牌	获取价格	描述	数据表
MGF0904	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0904A	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0904A_1	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0904A_11	MITSUBISHI	获取价格	High-power GaAs FET (small signal gain stage)
MGF0904A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se
MGF0905	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0905A	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0905A_1	MITSUBISHI	获取价格	L,S BAND POWER GaAs FET
MGF0905A_11	MITSUBISHI	获取价格	High-power GaAs FET (small signal gain stage)
MGF0905A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se