Datasheet > MB82DBS04163B-70

MB82DBS04163B-70

更新时间： 2024-09-18 20:09:31

品牌	Logo	应用领域
富士通 - FUJITSU		动态存储器
页数	文件大小	规格书
1页	13K
描述
DRAM

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中文翻译

获取价格

技术参数
数据手册

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MB82DBS04163B-70 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

MB82DBS04163B-70 数据手册

FUJITSU SEMICONDUCTOR

NEW PRODUCTS

NP05-11419-4E

64 Mbit Mobile FCRAM^TM

1.8V, Burst Mode

MB82DBS04163B-70/-70L

To be replaced soon

■ FEATURES

•

Asynchronous SRAM interface

Complies with Common Specifications for Mobile RAM (COSMORAM)

Burst Mode Function (Consecutive Read/Write Operation through Synchronization of System Clocks)

•

8 Words Page Address Access Capability

_____ ______

•

Byte Control with LB, UB pin

Low Power Consumption

Various Power Down Mode

Sleep

8 Mbit Partial

16 Mbit Partial

Chip/Wafer Business

•

In the form of Burst Mode MCP together with Burst Mode Flash Memory will be available.

71pin Plastic FBGA Package for Engineering Sample ONLY

■ PRODUCT OPTIONS

Part Number

MB82DBS04163B

Speed Version

70L

Organization

4 M WORD × 16 BIT

−30 °C to +85 °C

1.65 V to 1.95 V

66 MHz

Ambient Temperature

Supply Voltage

Burst Frequency (Read Latency = 5)

Read/Write Cycle Time (min.)

Clock Access Time (max.)

Random Access Time (max.)

Page Address Access Time (max.)

Active Current (Max.)

Standby Current (Max.)

Sleep

70 ns

14 ns

70 ns

20 ns

30 mA

200 µA

30 µA

150 µA

15 µA

75 µA

95 µA

Power Down

8 Mbit Partial

Current (Max.)

100 µA

120 µA

16 Mbit Partial

December, 2003

1/1

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