Datasheet > MB82DP02183E-65L

MB82DP02183E-65L

更新时间： 2024-09-18 03:10:43

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
1页	35K
描述
32 Mbit Mobile FCRAM 3.0 V, Page Mode

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中文翻译

获取价格

数据手册

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MB82DP02183E-65L 数据手册

FUJITSU SEMICONDUCTOR

INTRODUCTION SHEET

NP05-11449-2E

32 Mbit Mobile FCRAM^TM

3.0 V, Page Mode

MB82DP02183E-65L

ꢀ FEATURES

•

Pseudo SRAM with Asynchronous SRAM Interface

•

8 Words Page Read Access Capability

_____ ______

•

Byte Control by LB, UB

Low Power Consumption

Various Power Down Mode

•

Sleep

4 Mbit Partial

8 Mbit Partial

Chip / Wafer Business

•

ꢀ MAIN SPECIFICATIONS

Part Number

MB82DP02183E-65L

Organization

2 M Word × 16 bit

2.6 V to 3.1 V

20 ns

Supply Voltage

Page Address Access Time (Max.)

Address Access Time (Max.)

Active Current (Max.)

Standby Current (Max.)

65 ns

30 mA

120 μA

Power Down Current (Max.)

Sleep

10 μA

Note: FCRAM is a trademark of Fujitsu Limited, Japan.

September, 2007

1/1

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