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MB82DP04183C PDF预览

MB82DP04183C

更新时间: 2024-09-18 04:16:47
品牌 Logo 应用领域
富士通 - FUJITSU 手机
页数 文件大小 规格书
33页 291K
描述
64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory

MB82DP04183C 数据手册

 浏览型号MB82DP04183C的Datasheet PDF文件第2页浏览型号MB82DP04183C的Datasheet PDF文件第3页浏览型号MB82DP04183C的Datasheet PDF文件第4页浏览型号MB82DP04183C的Datasheet PDF文件第5页浏览型号MB82DP04183C的Datasheet PDF文件第6页浏览型号MB82DP04183C的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-11431-3E  
MEMORY Mobile FCRAMTM  
CMOS  
64M Bit (4 M word × 16 bit)  
Mobile Phone Application Specific Memory  
MB82DP04183C-65L  
DESCRIPTION  
The FUJITSU MB82DP04183C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous  
Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format.  
MB82DP04183C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in  
comparison to regular SRAM.  
This MB82DP04183C is suited for mobile applications such as Cellular Handset and PDA.  
*: FCRAM is a trademark of Fujitsu Limited, Japan.  
PRODUCT LINEUP  
Parameter  
Access time (Max) (tCE, tAA)  
MB82DP04183C-65L  
65 ns  
40 mA  
90 µA  
10 µA  
Active current (Max) (IDDA1)  
Standby current (Max) (IDDS1)  
Power down current (Max) (IDDPS)  
FEATURES  
• Asynchronous SRAM Interface  
• Fast Access Cycle Time : tAA = tCE = 65 ns Max  
• 8 words Page Access Capability : tPAA = 20 ns Max  
• Low Voltage Operating Condition : VDD = +2.6 V to +3.1 V  
• Wide Operating Temperature : TA = -30 °C to +85 °C  
• Byte Control by LB and UB  
• Low Power Consumption : IDDA1 = 40 mA Max  
IDDS1 = 90 µA Max ( TA = +40 °C)  
• Various Power Down mode : Sleep  
8M-bit Partial  
16M-bit Partial  
• Shipping Form : Wafer/Chip  
Copyright©2005-2006 FUJITSU LIMITED All rights reserved  

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