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MB82DP02183F PDF预览

MB82DP02183F

更新时间: 2024-09-18 11:13:19
品牌 Logo 应用领域
富士通 - FUJITSU 手机
页数 文件大小 规格书
32页 185K
描述
MEMORY Mobile FCRAM CMOS 32 M Bit (2 M word x 16 bit) Mobile Phone Application Specific Memory

MB82DP02183F 数据手册

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FUJITSU MICROELECTRONICS  
DATA SHEET  
DS05-11460-1E  
MEMORY Mobile FCRAMTM  
CMOS  
32 M Bit (2 M word × 16 bit)  
Mobile Phone Application Specific Memory  
MB82DP02183F-65L  
DESCRIPTION  
The MB82DP02183F is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static  
Random Access Memory (SRAM) interface containing 33, 554, 432 storages accessible in a 16-bit format.  
This MB82DP02183F is suited for mobile applications such as Cellular Handset and PDA.  
*: FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan  
FEATURES  
• Asynchronous SRAM Interface  
• Fast Access Time : tAA = tCE = 65 ns Max  
• 8 words Page Access Capability : tPAA = 20 ns Max  
• Low Voltage Operating Condition : VDD = 2.6 V to 3.1 V  
• Operating Temperature: TA = 0 °C to + 70 °C  
• Byte Control by LB and UB  
• Low Power Consumption : IDDA1 = 30 mA Max  
IDDS1 = 120 μA Max  
• Various Power Down mode : Sleep  
4 M-bit Partial  
8 M-bit Partial  
MAIN SPECIFICATIONS  
Parameter  
Access Time (Max) (tCE, tAA)  
MB82DP02183F-65L  
65 ns  
30 mA  
120 μA  
10 μA  
Active Current (Max) (IDDA1)  
Standby Current (Max) (IDDS1)  
Power Down Current (Max) (IDDPS)  
Copyright©2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved  
2009.8  

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