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MB82DP02183F-65LTBG PDF预览

MB82DP02183F-65LTBG

更新时间: 2024-11-07 11:13:19
品牌 Logo 应用领域
富士通 - FUJITSU 存储内存集成电路手机
页数 文件大小 规格书
32页 185K
描述
MEMORY Mobile FCRAM CMOS 32 M Bit (2 M word x 16 bit) Mobile Phone Application Specific Memory

MB82DP02183F-65LTBG 技术参数

是否Rohs认证:不符合生命周期:Contact Manufacturer
包装说明:TFBGA,Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:5.76
Is Samacsys:NJESD-30 代码:R-PBGA-B71
JESD-609代码:e0长度:11 mm
内存密度:33554432 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16功能数量:1
端子数量:71字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.1 V最小供电电压 (Vsup):2.6 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7 mmBase Number Matches:1

MB82DP02183F-65LTBG 数据手册

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FUJITSU MICROELECTRONICS  
DATA SHEET  
DS05-11460-1E  
MEMORY Mobile FCRAMTM  
CMOS  
32 M Bit (2 M word × 16 bit)  
Mobile Phone Application Specific Memory  
MB82DP02183F-65L  
DESCRIPTION  
The MB82DP02183F is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static  
Random Access Memory (SRAM) interface containing 33, 554, 432 storages accessible in a 16-bit format.  
This MB82DP02183F is suited for mobile applications such as Cellular Handset and PDA.  
*: FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan  
FEATURES  
• Asynchronous SRAM Interface  
• Fast Access Time : tAA = tCE = 65 ns Max  
• 8 words Page Access Capability : tPAA = 20 ns Max  
• Low Voltage Operating Condition : VDD = 2.6 V to 3.1 V  
• Operating Temperature: TA = 0 °C to + 70 °C  
• Byte Control by LB and UB  
• Low Power Consumption : IDDA1 = 30 mA Max  
IDDS1 = 120 μA Max  
• Various Power Down mode : Sleep  
4 M-bit Partial  
8 M-bit Partial  
MAIN SPECIFICATIONS  
Parameter  
Access Time (Max) (tCE, tAA)  
MB82DP02183F-65L  
65 ns  
30 mA  
120 μA  
10 μA  
Active Current (Max) (IDDA1)  
Standby Current (Max) (IDDS1)  
Power Down Current (Max) (IDDPS)  
Copyright©2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved  
2009.8  

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