Datasheet > MB82DP04184E-65L

MB82DP04184E-65L

更新时间： 2024-09-18 03:54:23

品牌	Logo	应用领域
富士通 - FUJITSU		手机
页数	文件大小	规格书
31页	465K
描述
64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory

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数据手册

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MB82DP04184E-65L 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-11447-1E

MEMORY Mobile FCRAM^TM

CMOS

64M Bit (4 M word × 16 bit)

Mobile Phone Application Specific Memory

MB82DP04184E-65L

■ DESCRIPTION

The Fujitsu MB82DP04184E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous

Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format.

This MB82DP04184E is suited for mobile applications such as Cellular Handset and PDA.

*: FCRAM is a trademark of Fujitsu Limited, Japan.

■ FEATURES

• Asynchronous SRAM Interface

• Fast Access Time : t^AA= tCE = 65 ns Max

• 8 words Page Access Capability : t^PAA= 20 ns Max

• Low Voltage Operating Condition : V^DD= 2.6 V to 3.1 V

• Wide Operating Temperature : T^A= 0 °C to + 70 °C

• Byte Control by LB and UB

• Low Power Consumption : IDDA1 = 40 mA Max

I^DDS1= 200 µA Max

• Various Power Down mode : Sleep

8M-bit Partial

16M-bit Partial

• Shipping Form : Wafer, Chip, 71-ball plastic FBGA

■ MAIN SPECIFICATIONS

Parameter

Access Time (Max) (tCE, tAA)

MB82DP04184E-65L

65 ns

40 mA

200 µA

10 µA

Active Current (Max) (IDDA1)

Standby Current (Max) (IDDS1)

Power Down Current (Max) (IDDPS)

12 3 4 5 6 7...31

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