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MB82DP04183B-65 PDF预览

MB82DP04183B-65

更新时间: 2024-09-18 20:05:15
品牌 Logo 应用领域
富士通 - FUJITSU 动态存储器
页数 文件大小 规格书
1页 13K
描述
DRAM

MB82DP04183B-65 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.75
Base Number Matches:1

MB82DP04183B-65 数据手册

  
FUJITSU SEMICONDUCTOR  
NEW PRODUCTS  
NP05-11420-2E  
64 Mbit Mobile FCRAMTM  
3.0 V, Page Mode  
MB82DP04183B-65/-65L  
To be replaced soon  
FEATURES  
Asynchronous SRAM interface  
Complies with Common Specifications for Mobile RAM (COSMORAM)  
8 Words Page Address Access Capability  
_____ ______  
Byte Control with LB, UB pin  
Low Power Consumption  
Various Power Down Mode  
Sleep  
8 Mbit Partial  
16 Mbit Partial  
Chip/Wafer Business  
In the form of MCP together with Flash Memory will be available.  
71pin Plastic FBGA Package for Engineering Sample ONLY  
PRODUCT OPTIONS  
Part Number  
MB82DP04183B  
Speed Version  
65  
65L  
Organization  
4 M WORD × 16 BIT  
30 °C to +85 °C  
Ambient Temperature  
Supply Voltage  
2.6 V to 3.1 V or 3.1 V to 3.5 V  
Read/Write Cycle Time (min.)  
Address Access Time (max.)  
Page Address Access Time (max.)  
Active Current (Max.)  
Standby Current (Max.)  
Sleep  
65 ns  
65 ns  
20 ns  
35 mA  
200 µA  
150 µA  
15 µA  
75 µA  
95 µA  
30 µA  
100 µA  
120 µA  
Power Down  
8 Mbit Partial  
Current (Max.)  
16 Mbit Partial  
December, 2003  
1/1  

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