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MB82DP02183C-65LWFKT PDF预览

MB82DP02183C-65LWFKT

更新时间: 2024-09-18 13:00:51
品牌 Logo 应用领域
富士通 - FUJITSU 手机
页数 文件大小 规格书
32页 286K
描述
Pseudo Static RAM, 2MX16, 65ns, CMOS, WAFER

MB82DP02183C-65LWFKT 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:DIE,Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.88Is Samacsys:N
最长访问时间:65 nsJESD-30 代码:X-XUUC-N
内存密度:33554432 bit内存集成电路类型:PSEUDO STATIC RAM
内存宽度:16功能数量:1
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-30 °C组织:2MX16
封装主体材料:UNSPECIFIED封装代码:DIE
封装形状:UNSPECIFIED封装形式:UNCASED CHIP
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大供电电压 (Vsup):3.5 V
最小供电电压 (Vsup):2.6 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MB82DP02183C-65LWFKT 数据手册

 浏览型号MB82DP02183C-65LWFKT的Datasheet PDF文件第2页浏览型号MB82DP02183C-65LWFKT的Datasheet PDF文件第3页浏览型号MB82DP02183C-65LWFKT的Datasheet PDF文件第4页浏览型号MB82DP02183C-65LWFKT的Datasheet PDF文件第5页浏览型号MB82DP02183C-65LWFKT的Datasheet PDF文件第6页浏览型号MB82DP02183C-65LWFKT的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-11422-3E  
MEMORY Mobile FCRAMTM  
CMOS  
32M Bit (2 M word × 16 bit)  
Mobile Phone Application Specific Memory  
MB82DP02183C-65L  
CMOS 2,097,152-WORD x 16 BIT  
Fast Cycle Random Access Memory  
with Low Power SRAM Interface  
DESCRIPTION  
The Fujitsu MB82DP02183C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous  
Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format.  
MB82DP02183C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in  
comparison to regular SRAM. This MB82DP02183C is suited for mobile applications such as Cellular Handset  
and PDA.  
*: FCRAM is a trademark of Fujitsu Limited, Japan  
FEATURES  
• Asynchronous SRAM Interface  
• Fast Access Cycle Time : tAA = tCE = 65 ns Max  
• 8 words Page Access Capability : tPAA = 20 ns Max  
• Low Voltage Operating Condition : VDD = +2.6 V to +3.5 V  
• Wide Operating Temperature : TA = -30 °C to +85 °C  
• Byte Control by LB and UB  
• Low Power Consumption : IDDA1 = 30 mA Max  
IDDS1 = 80 µA Max  
• Various Power Down mode : Sleep  
4M-bit Partial  
8M-bit Partial  
• Shipping Form : Wafer/Chip, 71-ball plastic FBGA package  
Copyright© 2004-2006 FUJITSU LIMITED All rights reserved  

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