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MB82DBS04163B-80 PDF预览

MB82DBS04163B-80

更新时间: 2024-09-18 20:48:23
品牌 Logo 应用领域
富士通 - FUJITSU 动态存储器
页数 文件大小 规格书
1页 12K
描述
DRAM

MB82DBS04163B-80 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.75
Base Number Matches:1

MB82DBS04163B-80 数据手册

  
FUJITSU SEMICONDUCTOR  
NEW PRODUCTS  
NP05-11418-3E  
32 Mbit Mobile FCRAMTM  
1.8V, Burst Mode  
MB82DBS02163C-70/-70L  
(New released)  
FEATURES  
Asynchronous SRAM interface  
Complies with Common Specifications for Mobile RAM (COSMORAM)  
Burst Mode Function (Consecutive Read/Write Operation through Synchronization of System Clocks)  
8 Words Page Address Access Capability  
_____ ______  
Byte Control with LB, UB pin  
Low Power Consumption  
Various Power Down Mode  
Sleep  
4 Mbit Partial  
8 Mbit Partial  
71 pin-Plastic FBGA Package  
In the form of Burst Mode MCP together with Burst Mode Flash Memory will be available.  
Wafer Business is acceptable  
PRODUCT OPTIONS  
Part Number  
MB82DBS02163C  
Speed Version  
70  
70L  
Organization  
2 M WORD × 16 BIT  
30 °C to +85 °C  
1.65 V to 1.95 V  
66 MHz  
Ambient Temperature  
Supply Voltage  
Burst Frequency (Read Latency = 5)  
Read/Write Cycle Time (min.)  
Clock Access Time (max.)  
Random Access Time (max.)  
Page Address Access Time (max.)  
Active Current (Max)  
Standby Current (Max)  
Sleep  
70 ns  
12 ns  
70 ns  
20 ns  
30 mA  
200 µA  
30 µA  
80 µA  
100 µA  
80 µA  
10 µA  
40 µA  
50 µA  
Power Down  
4 Mbit Partial  
Current (Max)  
8 Mbit Partial  
August, 2003  
1/1  

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