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MB82DBS04163C PDF预览

MB82DBS04163C

更新时间: 2024-09-18 04:16:47
品牌 Logo 应用领域
富士通 - FUJITSU 手机
页数 文件大小 规格书
62页 560K
描述
MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word】16 bit) Mobile Phone Application Specific Memory

MB82DBS04163C 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-11432-1E  
MEMORY Mobile FCRAMTM  
CMOS  
64 M Bit (4 M word×16 bit)  
Mobile Phone Application Specific Memory  
MB82DBS04163C-70L  
DESCRIPTION  
The FUJITSU MB82DBS04163C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous  
Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format.  
MB82DBS04163C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in  
comparison to regular SRAM.  
The MB82DBS04163C adopts asynchronous page mode and synchronous burst mode for fast memory access  
as user configurable options.  
This MB82DBS04163C is suited for mobile applications such as Cellular Handset and PDA.  
* : FCRAM is a trademark of FUJITSU LIMITED, Japan  
PRODUCT LINEUP  
Parameter  
Access Time (Max) (tCE, tAA)  
MB82DBS04163C-70L  
70 ns  
10 ns  
35 mA  
90 µA  
10 µA  
Access Time from CLK (Max) (tAC)  
Active Current (Max) (IDDA1)  
RL = 6, 5  
Standby Current (Max) (IDDS1)  
Power Down Current (Max) (IDDPS)  
TA ≤ + 40 °C  
FEATURES  
• Asynchronous SRAM Interface  
• Fast Access Time : tCE = 70 ns Max  
• 8 words Page Access Capability : tPAA = 20 ns Max  
• Burst Read/Write Access Capability : tAC = 10 ns Max  
• Low Voltage Operating Condition : VDD = 1.7 V to 1.95 V  
• Wide Operating Temperature : TA = -30 °C to +85 °C  
• Byte Control by LB and UB  
• Low-Power Consumption : IDDA1 = 35 mA Max  
IDDS1 = 90 µA Max (TA ≤ + 40°C )  
• Various Power Down mode : Sleep  
8 M-bit Partial  
16 M-bit Partial  
• Shipping Form : Wafer/Chip  

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