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KSD362RTU PDF预览

KSD362RTU

更新时间: 2024-11-18 13:09:11
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页数 文件大小 规格书
4页 64K
描述
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KSD362RTU 数据手册

 浏览型号KSD362RTU的Datasheet PDF文件第2页浏览型号KSD362RTU的Datasheet PDF文件第3页浏览型号KSD362RTU的Datasheet PDF文件第4页 
KSD362  
B/W TV Horizontal Deflection Output  
Collector-Base Voltage : V  
=150V  
CBO  
Collector Current : I =5A  
C
Collector Dissipation : P =40W(T =25°C)  
C
C
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
150  
V
V
CBO  
CEO  
EBO  
70  
8
V
I
5
40  
A
C
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 1mA, I = 0  
150  
70  
8
CBO  
CEO  
EBO  
C
C
E
E
BV  
BV  
= 2mA, R = ∞  
V
BE  
= 1mA, I = 0  
V
C
I
V
V
= 100V, I = 0  
20  
140  
1
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
= 5V, I = 5A  
20  
FE  
C
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I
I
= 5A, I = 0.5A  
V
V
CE  
C
C
B
(sat)  
= 5A, I = 0.5A  
1.5  
BE  
B
f
V
= 5V, I = 0.5A  
10  
MHz  
T
CE  
C
h
Classification  
FE  
Classification  
N
R
O
h
20 ~ 50  
40 ~ 80  
70 ~ 140  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

KSD362RTU 替代型号

型号 品牌 替代类型 描述 数据表
KSD362R FAIRCHILD

完全替代

B/W TV Horizontal Deflection Output
2SD2642 SANKEN

功能相似

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
2SD2641 SANKEN

功能相似

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)

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