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KSD401OJ69Z PDF预览

KSD401OJ69Z

更新时间: 2024-11-15 07:44:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网放大器晶体管
页数 文件大小 规格书
4页 59K
描述
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSD401OJ69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84最大集电极电流 (IC):2 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):70JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):5 MHz

KSD401OJ69Z 数据手册

 浏览型号KSD401OJ69Z的Datasheet PDF文件第2页浏览型号KSD401OJ69Z的Datasheet PDF文件第3页浏览型号KSD401OJ69Z的Datasheet PDF文件第4页 
KSD401  
TV Vertical Deflection Output  
Collector-Base Voltage : V  
=200V  
CBO  
Collector Current : I =2A  
C
Collector Dissipation : P =25W(T =25°C)  
C
C
Complement to KSB546  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
200  
V
V
CBO  
CEO  
EBO  
150  
5
V
I
2
25  
A
C
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 500uA, I = 0  
200  
150  
5
CBO  
CEO  
EBO  
C
C
E
E
BV  
BV  
= 10mA, I = 0  
V
B
= -500uA, I = 0  
V
C
I
V
V
= 150V, I = 0  
50  
400  
1
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
= 10V, I = 0.4A  
40  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I
= 500mA, I = 50mA  
V
CE  
C
B
f
V
= 10V, I = 0.4A  
5
MHz  
T
CE  
C
h
Classification  
FE  
Classification  
R
O
Y
G
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
200 ~ 400  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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