生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 150 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 70 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSD401R | ISC |
获取价格 |
暂无描述 | |
KSD401-R | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD401RJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD401Y | FAIRCHILD |
获取价格 |
TV Vertical Deflection Output | |
KSD401-Y | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD401YJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD401YTU | FAIRCHILD |
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TV Vertical Deflection Output | |
KSD402 | KODENSHI |
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Position Sensitive Diodes | |
KSD417AG | FAIRCHILD |
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Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
KSD417AO | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |