型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BD245C-S | BOURNS |
功能相似 |
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
BDW53D-S | BOURNS |
功能相似 |
Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSD363-R | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD363RJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD363RTU | FAIRCHILD |
获取价格 |
NPN Epitaxial Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL | |
KSD363RTU | ONSEMI |
获取价格 |
NPN外延硅晶体管 | |
KSD363Y | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD363-Y | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD363YJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD363YTU | ONSEMI |
获取价格 |
NPN外延硅晶体管 | |
KSD401 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
KSD401 | FAIRCHILD |
获取价格 |
TV Vertical Deflection Output |