KSD401R

更新时间： 2024-02-03 10:52:34

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
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2页	108K
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KSD401R 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

KSD401

DESCRIPTION

·Collector-Base Breakdown Voltage-

: V_(BR)CBO= 200V(Min)

·Collector Current- I_C= 2A

·Collector Power Dissipation-

: P_C= 25W@ T_C= 25℃

·Complement to Type KSB546

APPLICATIONS

·Designed for TV Vertical deflection output applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

200

150

UNIT

Collector Current-Continuous

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与KSD401R相关器件

型号	品牌	获取价格	描述	数据表
KSD401-R	SAMSUNG	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401RJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401Y	FAIRCHILD	获取价格	TV Vertical Deflection Output
KSD401-Y	SAMSUNG	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401YJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401YTU	FAIRCHILD	获取价格	TV Vertical Deflection Output
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KSD417AG	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
KSD417AO	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
KSD417AY	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92