Datasheet > KSD401_04

KSD401_04

更新时间： 2024-02-23 15:14:58

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	72K
描述
NPN Epitaxial Silicon Transistor

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中文翻译

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数据手册

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KSD401_04 数据手册

KSD401

TV Vertical Deflection Output

•

Collector-Base Voltage : V

=200V

CBO

Collector Current : I =2A

Collector Dissipation : P =25W(T =25°C)

Complement to KSB546

TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

200

CBO

CEO

EBO

150

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

= 500uA, I = 0

200

150

CBO

CEO

EBO

= 10mA, I = 0

= -500uA, I = 0

= 150V, I = 0

400

µA

CBO

DC Current Gain

= 10V, I = 0.4A

120

(sat)

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

= 500mA, I = 50mA

= 10V, I = 0.4A

MHz

Classification

120 ~ 240

200 ~ 400

Rev. B, February 2004

12 3 4

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