是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | LEAD FREE, TO-220, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 1.6 |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 120 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 40 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSD401 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
KSD401 | FAIRCHILD |
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TV Vertical Deflection Output | |
KSD401_04 | FAIRCHILD |
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NPN Epitaxial Silicon Transistor | |
KSD401FYTU | FAIRCHILD |
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Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD401G | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD401G | ISC |
获取价格 |
Transistor | |
KSD401-G | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD401GJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD401J69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD401O | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |