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KSD363YTU PDF预览

KSD363YTU

更新时间: 2024-11-19 11:10:39
品牌 Logo 应用领域
安森美 - ONSEMI 局域网放大器晶体管
页数 文件大小 规格书
6页 179K
描述
NPN外延硅晶体管

KSD363YTU 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:LEAD FREE, TO-220, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:1.6
最大集电极电流 (IC):6 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

KSD363YTU 数据手册

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