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KSD401O PDF预览

KSD401O

更新时间: 2024-02-04 17:16:17
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
4页 68K
描述
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSD401O 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.75
最大集电极电流 (IC):2 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):70
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN最大功率耗散 (Abs):25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):5 MHz
Base Number Matches:1

KSD401O 数据手册

 浏览型号KSD401O的Datasheet PDF文件第2页浏览型号KSD401O的Datasheet PDF文件第3页浏览型号KSD401O的Datasheet PDF文件第4页 
KSD401  
TV Vertical Deflection Output  
Collector-Base Voltage : V  
=200V  
CBO  
Collector Current : I =2A  
C
Collector Dissipation : P =25W(T =25°C)  
C
C
Complement to KSB546  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
200  
V
V
CBO  
CEO  
EBO  
150  
5
V
I
2
25  
A
C
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 500uA, I = 0  
200  
150  
5
CBO  
CEO  
EBO  
C
C
E
E
BV  
BV  
= 10mA, I = 0  
V
B
= -500uA, I = 0  
V
C
I
V
V
= 150V, I = 0  
50  
400  
1
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
= 10V, I = 0.4A  
120  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I
= 500mA, I = 50mA  
V
CE  
C
B
f
V
= 10V, I = 0.4A  
5
MHz  
T
CE  
C
h
Classification  
FE  
Classification  
Y
G
h
120 ~ 240  
200 ~ 400  
FE  
©2004 Fairchild Semiconductor Corporation  
Rev. B, February 2004  

KSD401O 替代型号

型号 品牌 替代类型 描述 数据表
KSC1507Y FAIRCHILD

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Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
KSD73O FAIRCHILD

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Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
KSD401G FAIRCHILD

类似代替

Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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