KSD401G

更新时间： 2024-11-18 13:09:11

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	108K
描述
Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

KSD401G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

KSD401G 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

KSD401

DESCRIPTION

·Collector-Base Breakdown Voltage-

: V_(BR)CBO= 200V(Min)

·Collector Current- I_C= 2A

·Collector Power Dissipation-

: P_C= 25W@ T_C= 25℃

·Complement to Type KSB546

APPLICATIONS

·Designed for TV Vertical deflection output applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

200

150

UNIT

Collector Current-Continuous

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与KSD401G相关器件

型号	品牌	获取价格	描述	数据表
KSD401-G	SAMSUNG	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401GJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401J69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401O	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401-O	SAMSUNG	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401OJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401R	ISC	获取价格	暂无描述
KSD401-R	SAMSUNG	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401RJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD401Y	FAIRCHILD	获取价格	TV Vertical Deflection Output