KSD363O

更新时间： 2024-11-21 13:09:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		电视
页数	文件大小	规格书
4页	63K
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数据手册

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KSD363O 数据手册

KSD363

B/W TV Horizontal Deflection Output

•

Collector-Base Voltage : V

=300V

CBO

Collector Current : I =6A

Collector Dissipation : P =40W(T =25°C)

TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

300

CBO

CEO

EBO

120

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

=1mA, I = 0

300

120

CBO

CEO

EBO

= 20mA, I = 0

= 1mA, I = 0

= 250V, I = 0

240

CBO

DC Current Gain

= 5V, I = 1A

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

= 1A, I = 0.1A

(sat)

= 1A, I = 0.1A

1.5

= 5V, I = 0.5A

MHz

Classification

40 ~ 80

70 ~ 140

120 ~ 240

Rev. A, February 2000

12 3 4

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与KSD363O相关器件

型号	品牌	获取价格	描述	数据表
KSD363-O	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD363OJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD363OTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD363R	FAIRCHILD	获取价格	B/W TV Horizontal Deflection Output
KSD363-R	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD363RJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD363RTU	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
KSD363RTU	ONSEMI	获取价格	NPN外延硅晶体管
KSD363Y	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD363-Y	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast