Datasheet > KSD363

KSD363

更新时间： 2024-11-18 05:41:03

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	110K
描述
isc Silicon NPN Power Transistor

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KSD363 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

KSD363

DESCRIPTION

·Collector-Base Breakdown Voltage-

: V_(BR)CBO= 300V(Min)

·Collector Current- I_C= 6A

·Collector Power Dissipation-

: P_C= 40W@ T_C= 25℃

APPLICATIONS

·Designed for B/W TV horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

300

120

UNIT

Collector Current-Continuous

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与KSD363相关器件

型号	品牌	获取价格	描述	数据表
KSD363O	FAIRCHILD	获取价格	暂无描述
KSD363-O	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD363OJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD363OTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD363R	FAIRCHILD	获取价格	B/W TV Horizontal Deflection Output
KSD363-R	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD363RJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSD363RTU	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
KSD363RTU	ONSEMI	获取价格	NPN外延硅晶体管
KSD363Y	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast