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JANSR2N7472U2S

更新时间： 2024-11-22 14:56:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 1047K
描述
Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL

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JANSR2N7472U2S 数据手册

 浏览型号JANSR2N7472U2S的Datasheet PDF文件第2页浏览型号JANSR2N7472U2S的Datasheet PDF文件第3页浏览型号JANSR2N7472U2S的Datasheet PDF文件第4页浏览型号JANSR2N7472U2S的Datasheet PDF文件第5页浏览型号JANSR2N7472U2S的Datasheet PDF文件第6页浏览型号JANSR2N7472U2S的Datasheet PDF文件第7页 
PD-93856F  
IRHNA57163SE  
JANSR2N7472U2  
130V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-2)  
REF: MIL-PRF-19500/684  
TECHNOLOGY  
R
5
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHNA57163SE  
100 kRads(Si)  
75A*  
JANSR2N7472U2  
0.0135  
SMD-2  
Description  
Features  
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
ESD Rating: Class 3B per MIL-STD-750,  
Method 1020  
IR HiRel R5 technology provides high performance power  
MOSFETs for space applications. These devices have been  
characterized for Single Event Effects (SEE) with useful  
performance up to an LET of 80 (MeV/(mg/cm2)). The  
combination of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC to DC  
converters and motor control. These devices retain all of the  
well established advantages of MOSFETs such as voltage  
control, fast switching and temperature stability of electrical  
parameters.  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current  
75*  
A
57  
IDM @ TC = 25°C  
PD @ TC = 25°C  
Pulsed Drain Current   
300  
250  
2.0  
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
VGS  
EAS  
Gate-to-Source Voltage  
± 20  
280  
Single Pulse Avalanche Energy   
mJ  
A
IAR  
EAR  
75  
25  
Avalanche Current   
mJ  
V/ns  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
dv/dt  
5.5  
TJ  
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
Weight  
-55 to + 150  
TSTG  
°C  
g
300 ( for 5s)  
3.3 (Typical)  
For Footnotes, refer to the page 2.  
1
2020-11-10  
International Rectifier HiRel Products, Inc.  
12345678

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