Datasheet > JANSR2N7472U2S

JANSR2N7472U2S

更新时间： 2024-11-06 14:56:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1047K
描述
Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL

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JANSR2N7472U2S 数据手册

PD-93856F

IRHNA57163SE

JANSR2N7472U2

130V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

REF: MIL-PRF-19500/684

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

IRHNA57163SE

100 kRads(Si)

75A*

JANSR2N7472U2

0.0135

SMD-2

Description

Features



Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

ESD Rating: Class 3B per MIL-STD-750,

Method 1020

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have been

characterized for Single Event Effects (SEE) with useful

performance up to an LET of 80 (MeV/(mg/cm²)). The

combination of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC to DC

converters and motor control. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching and temperature stability of electrical

parameters.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

75*

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

300

250

2.0

W/°C

Maximum Power Dissipation

Linear Derating Factor

V_GS

E_AS

Gate-to-Source Voltage

± 20

280

Single Pulse Avalanche Energy 

I_AR

E_AR

Avalanche Current 

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

dv/dt

5.5

T_J

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to + 150

T_STG

°C

300 ( for 5s)

3.3 (Typical)

For Footnotes, refer to the page 2.

2020-11-10

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

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与JANSR2N7472U2S相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7473U2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)
JANSR2N7473U2A	INFINEON	获取价格	Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7474U2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
JANSR2N7474U2A	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7475T1	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
JANSR2N7476T1	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
JANSR2N7477T1	INFINEON	获取价格	Rad hard, 250V, 37A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7478T1	INFINEON	获取价格	Rad hard, 30V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254A
JANSR2N7479U3	INFINEON	获取价格	Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(
JANSR2N7480U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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