Datasheet > JANSR2N7481U3

JANSR2N7481U3

更新时间： 2024-11-21 14:56:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1096K
描述
Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N7481U3 数据手册

IRHNJ57130 (JANSR2N7481U3)

PD-93754H

Radiation Hardened Power MOSFET

Surface Mount (SMD-0.5)

100V, 22A, N-channel, R5 Technology

Product Summary

Features



Single event effect (SEE) hardened



BV_DSS: 100V

I_D: 22A

R_DS(on),max: 60m

Q_G,max: 50nC

REF: MIL-PRF-19500/703

Low R_DS(on)

Low total gate charge

Simple drive requirements

Hermetically sealed

Light weight

Surface Mount

ESD rating: Class 1C per MIL-STD-750, Method 1020

Potential Applications



DC-DC converter

Motor drives

SMD-0.5



Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R5 technology provides high performance power MOSFETs for space applications. This technology has

over a decade of proven performance and reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low gate

charge reduces the power losses in switching applications such as DC to DC converters and motor control. These

devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHNJ57130

Ordering options

Package

Screening Level

COTS

TID Level

SMD-0.5

100 krad(Si)

300 krad(Si)

500 krad(Si)

JANSR2N7481U3

IRHNJ53130

SMD-0.5

JANS

COTS

JANSF2N7481U3

IRHNJ54130

JANS

COTS

JANSG2N7481U3

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 13

www.infineon.com/irhirel

2022-05-25

12 3 4 5 6 7...13

中文翻译

下载PDF

与JANSR2N7481U3相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7482T3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSR2N7483T3	INFINEON	获取价格	Rad hard, 60V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kra
JANSR2N7484T3	INFINEON	获取价格	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kr
JANSR2N7485U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSR2N7486U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSR2N7487U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSR2N7488T3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSR2N7489T3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSR2N7490T3	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 250V, 0.41ohm, 1-Element, N-Channel, Silicon, Met
JANSR2N7491T2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)