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JANSR2N7489T3

更新时间： 2024-11-05 04:45:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
8页	175K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

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中文翻译

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JANSR2N7489T3 数据手册

ꢁ

PD - 93822B

IRHY57230CMSE

RADIATION HARDENED

POWER MOSFET

JANSR2N7489T3

200V, N-CHANNEL

THRU-HOLE (TO-257AA)

REF:MIL-PRF-19500/705

TECHNOLOGY

Product Summary

Part Number

IRHY57230CMSE 100K Rads (Si)

Radiation Level RDS(on)

0.23Ω

QPL Part Number

12A JANSR2N7489T3

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

TO-257AA

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

7.6

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

5.4

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10sec)

4.3 (Typical)

For footnotes refer to the last page

www.irf.com

06/10/04

12 3 4 5 6 7 8

中文翻译

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